US 12,381,067 B2
Substrate processing apparatus
Min Ho Cheon, Gwangju-si (KR); and Chul Joo Hwang, Gwangju-si (KR)
Assigned to JUSUNG ENGINEERING CO., LTD., (KR)
Appl. No. 17/911,416
Filed by JUSUNG ENGINEERING CO., LTD., Gwangju-si (KR)
PCT Filed May 4, 2021, PCT No. PCT/KR2021/005577
§ 371(c)(1), (2) Date Sep. 13, 2022,
PCT Pub. No. WO2021/235739, PCT Pub. Date Nov. 25, 2021.
Claims priority of application No. 10-2020-0059687 (KR), filed on May 19, 2020.
Prior Publication US 2023/0104088 A1, Apr. 6, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32568 (2013.01) [H01J 37/32165 (2013.01); H01J 37/3244 (2013.01); H01J 37/32541 (2013.01); H01J 37/32577 (2013.01); H01J 37/32715 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An apparatus for processing substrate, the apparatus comprising:
a chamber;
a substrate supporting part supporting one or more substrates in the chamber;
an upper electrode disposed over the substrate supporting part so as to be opposite to the substrate supporting part; and
a lower electrode disposed under the upper electrode so as to be apart from the upper electrode,
wherein
the upper electrode injects a first gas through a first gas flow path and injects a second gas through a second gas flow path spatially apart from the first gas flow path, and
the lower electrode comprises:
a first electrode to which only a first radio frequency (RF) power having a first frequency is applied; and
a second electrode to which only a second RF power having a second frequency lower than the first frequency is applied.