US 12,380,955 B2
Memory controller and method for adaptively programming flash memory
Chung-Meng Huang, Hsinchu (TW)
Assigned to WINDBOND ELECTRONICS CORP., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Jan. 6, 2023, as Appl. No. 18/151,062.
Prior Publication US 2024/0233840 A1, Jul. 11, 2024
Int. Cl. G11C 11/34 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/102 (2013.01); G11C 16/30 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A memory controller for controlling a flash memory, the memory controller comprises:
a control circuit, configured to program one or more pages in the flash memory in sequence, wherein each page includes a plurality of bytes; and
a voltage generator, configured to adjust an output voltage according to a control signal from the control circuit;
wherein the control circuit performs a programming verification operation on each byte of a current page of the one or more pages in a page programming mode, calculates a first number of bytes which fail the programming verification operation and have been performed a programming operation again;
wherein the control circuit determines a programming mode of the page after the current page as the page programming mode or a byte programming mode according to the first number;
wherein the control circuit determines the programming mode of the page after the current page as the page programming mode when the first number is greater than a predetermined threshold value;
wherein the control circuit determines the programming mode of the page after the current page as the byte programming mode when the first number is less than or equal to the predetermined threshold value.