US 12,380,948 B2
RRAM voltage compensation
Chien-An Lai, Hsinchu (TW); Chung-Cheng Chou, Jsomcji (TW); and Yu-Der Chih, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 15, 2022, as Appl. No. 17/721,985.
Application 17/721,985 is a continuation of application No. 17/135,169, filed on Dec. 28, 2020, granted, now 11,309,022.
Application 17/135,169 is a continuation of application No. 16/502,671, filed on Jul. 3, 2019, granted, now 10,878,902, issued on Dec. 29, 2020.
Claims priority of provisional application 62/698,693, filed on Jul. 16, 2018.
Prior Publication US 2022/0238155 A1, Jul. 28, 2022
Int. Cl. G11C 13/00 (2006.01); G11C 7/04 (2006.01); G11C 7/10 (2006.01)
CPC G11C 13/0028 (2013.01) [G11C 7/04 (2013.01); G11C 7/1063 (2013.01); G11C 13/0026 (2013.01); G11C 13/003 (2013.01); G11C 13/0038 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising
an array of memory cells comprising a plurality of word lines;
a voltage compensation controller configured to:
receive a first address corresponding to a first selected word line of the plurality of word lines,
determine, based on the first address, a first segment from a plurality of segments in which the first selected word line is located in, wherein the plurality of word lines are grouped into the plurality of segments each comprising a predetermined number of word lines of the plurality of word lines,
determine, based on a first segment identifier, a first word line voltage comprising a first predetermined word line voltage associated with the first segment in which the first selected word line is located in to be applied to the first selected word line, wherein each segment of the plurality of segments is associated with a predetermined word line voltage, wherein the first segment identifier is appended as additional bits to a first word line address of the first selected word line, the segment identifier identifying the first segment of the first word line according to its location, and wherein the segment identifier, and wherein the first word line voltage is generated by switching one or more switches controlling a resistor ladder of the voltage compensation controller based on the segment identifier,
receive a second address corresponding to a second selected word line of the plurality of word lines, and
determine a second word line voltage to be applied to the second selected word line, wherein the second word line voltage to be applied to the second selected word line is lower than the first word line voltage to be applied to the first selected word line.