US 12,380,919 B2
Tunneling device having intermediate layer using natural oxide film and method of manufacturing tunneling device
Hyun Yong Yu, Seoul (KR); and Kyu Hyun Han, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Appl. No. 17/909,055
Filed by Korea University Research and Business Foundation, Seoul (KR)
PCT Filed Jun. 7, 2021, PCT No. PCT/KR2021/007067
§ 371(c)(1), (2) Date Sep. 2, 2022,
PCT Pub. No. WO2022/181889, PCT Pub. Date Sep. 1, 2022.
Claims priority of application No. 10-2021-0026173 (KR), filed on Feb. 26, 2021.
Prior Publication US 2023/0112348 A1, Apr. 13, 2023
Int. Cl. G11B 5/39 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC G11B 5/3909 (2013.01) [H01L 21/02568 (2013.01); H01L 21/0272 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A tunneling device comprising:
an oxide substrate;
a first semiconductor portion disposed on the oxide substrate;
a source electrode disposed on the oxide substrate and in contact with the first semiconductor portion;
a second semiconductor portion disposed on the first semiconductor portion;
an intermediate layer disposed between the first semiconductor portion and second semiconductor portion; and
a drain electrode disposed on the second semiconductor portion,
wherein the intermediate layer is a film of h-BN,
wherein the second semiconductor portion comprises a material selected from the group consisting of MoS2, WSe2, MoTe2, WS2, MoSe2, ReS2, ReSe2, HfS2, BP, and WTe2,
wherein the intermediate layer has a thickness between about 1 nanometer and about 2 nanometers,
wherein the first semiconductor portion is formed on the oxide substrate using a stamp, and the second semiconductor portion is stacked on the first semiconductor portion using the stamp and an organic film while being disposed on a second oxide substrate different from the first oxide substrate,
wherein the first semiconductor portion comprises transition metal dichalcogenide materials selected from the group consisting of MoS2, MoTe2, WS2, MoSe2, ReS2, ReSe2, and WTe2, and
wherein the second semiconductor portion is separated from the oxide substrate by the intermediate layer.