| CPC G09F 9/301 (2013.01) [G09G 3/3266 (2013.01); H10K 50/8428 (2023.02); H10K 59/12 (2023.02); H10K 59/8723 (2023.02); H10K 77/111 (2023.02); H10K 59/873 (2023.02); H10K 2102/311 (2023.02); Y02E 10/549 (2013.01)] | 5 Claims |

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1. A semiconductor device comprising:
a flexible substrate;
a first insulating layer over the flexible substrate;
a thin film transistor over the first insulating layer;
a second insulating layer over the thin film transistor;
a lower electrode over the second insulating layer, and electrically connected to the thin film transistor;
a third insulating layer over a part of the lower electrode;
an electroluminescence layer over the lower electrode;
an upper electrode over the electroluminescence layer and the third insulating layer;
a first bonding layer over the upper electrode;
a first conductive layer over the first bonding layer;
a fourth insulating layer over the first conductive layer;
a second conductive layer over the fourth insulating layer;
a fifth insulating layer over the second conductive layer;
a second bonding layer over the fifth insulating layer; and
a circular polarizing plate over the second bonding layer.
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