US 12,380,021 B2
Memory system based on flash memory and method for managing meta data thereof
Hyun Jin Choi, Suwon-si (KR); Sunghyun Noh, Gyeonggi-Dosuwon-si (KR); Insoon Jo, Suwon-si (KR); Kui-Yon Mun, Suwon-si (KR); and Myung-Jin Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 9, 2023, as Appl. No. 18/207,963.
Claims priority of application No. 10-2022-0142453 (KR), filed on Oct. 31, 2022.
Prior Publication US 2024/0143500 A1, May 2, 2024
Int. Cl. G06F 12/00 (2006.01); G06F 12/02 (2006.01); G06F 12/0882 (2016.01)
CPC G06F 12/0246 (2013.01) [G06F 12/0292 (2013.01); G06F 12/0882 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system comprising:
a flash memory including a meta block and a data block, the meta block including a plurality of pages; and
a memory controller including a meta data managing module configured to manage meta data to be stored in the meta block,
wherein the meta data managing module is configured to
compare a number of free pages from among the plurality of pages with a set free page count to provide a comparison result, and
depending on the comparison result, select a write operation from a consecution meta write operation and a dirty meta write operation, and select a write target page of the meta data from among the free pages by using the selected write operation, wherein the consecution meta write operation is a write operation that uses all meta pages in round-robin manner regardless of changed meta pages, and the dirty meta write operation is a write operation that uses only changed meta pages.