US 12,379,878 B1
Data storage device and method for storing selected data in relatively-lower data retention pages of a quad-level cell memory
Meer Afroz Mohammed, Bengaluru (IN); Pawan Negi, Bengaluru (IN); and Bhavadip Solanki, Bengaluru (IN)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Sandisk Technologies, Inc., Milpitas, CA (US)
Filed on Jun. 4, 2024, as Appl. No. 18/733,238.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0614 (2013.01); G06F 3/0631 (2013.01); G06F 3/065 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A data storage device comprising:
a quad level cell (QLC) memory comprising a lower page (LP), a middle page (MP), an upper page (UP), and a top page (TP); and
one or more processors, individually or in combination, configured to:
determine data reliability of each of the pages;
write data for an internal data storage device operation in a first set of pages whose data retention is below a threshold; and
write host data in a second set of pages whose data retention is above the threshold.