US 12,379,675 B2
Extreme ultraviolet lithography system
Ssu-Yu Chen, New Taipei (TW); Po-Chung Cheng, Chiayi County (TW); Li-Jui Chen, Hsinchu (TW); Che-Chang Hsu, Taichung (TW); and Chi Yang, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 2, 2024, as Appl. No. 18/762,559.
Application 18/762,559 is a continuation of application No. 17/395,465, filed on Aug. 6, 2021, granted, now 12,055,865.
Application 17/395,465 is a continuation of application No. 16/805,861, filed on Mar. 2, 2020, granted, now 11,086,237, issued on Aug. 10, 2021.
Claims priority of provisional application 62/880,649, filed on Jul. 30, 2019.
Prior Publication US 2024/0353766 A1, Oct. 24, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01)
CPC G03F 7/70916 (2013.01) [G03F 7/70033 (2013.01); G03F 7/70166 (2013.01); G03F 7/70175 (2013.01); G03F 7/70883 (2013.01); G03F 7/70891 (2013.01); G03F 7/70908 (2013.01); H05G 2/0025 (2024.08)] 20 Claims
OG exemplary drawing
 
1. An extreme ultraviolet (EUV) lithography system, comprising:
a vane bucket module, comprising:
a temperature adjusting pack having a plurality of inlets; and
a collecting tank inserted into the temperature adjusting pack, wherein the collecting tank has a cover, the cover comprises a plurality of through holes, the inlets of the temperature adjusting pack are aligned with the through holes of the cover, each through hole has a minimum depth at a first position and a maximum depth at a second position, and the first position is closer to a center of the cover than the second position.