US 12,378,670 B2
Substrate processing method
Tetsuro Shirasaka, Koshi (JP); and Naoto Nakamura, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 10, 2024, as Appl. No. 18/408,801.
Application 18/408,801 is a division of application No. 17/434,160, granted, now 11,905,597, previously published as PCT/JP2020/005872, filed on Feb. 14, 2020.
Claims priority of application No. 2019-035707 (JP), filed on Feb. 28, 2019.
Prior Publication US 2024/0141501 A1, May 2, 2024
Int. Cl. C23C 18/16 (2006.01); B05B 14/00 (2018.01); G03F 7/16 (2006.01); H01L 21/67 (2006.01)
CPC C23C 18/1603 (2013.01) [B05B 14/00 (2018.02); C23C 18/163 (2013.01); C23C 18/1678 (2013.01); G03F 7/162 (2013.01); H01L 21/6715 (2013.01); H01L 21/67253 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
performing an adjustment processing including: forming a film on a surface of a substrate by a film forming unit configured to form the film on the surface of the substrate and remove at least a part of the film; removing a peripheral portion of the film by the film forming unit; adjusting a cut width of the peripheral portion based on surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed; and peeling the film, from which the peripheral portion has been removed, by the film forming unit; and
performing a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.