US 12,378,667 B2
Methods and systems for forming doped silicon nitride films
Xingye Wang, Gilbert, AZ (US); Fu Tang, Gilbert, AZ (US); Eric Jen cheng Liu, Tempe, AZ (US); Peijun Jerry Chen, Phoenix, AZ (US); and YoungChol Byun, Tempe, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Oct. 24, 2022, as Appl. No. 17/971,860.
Claims priority of provisional application 63/272,486, filed on Oct. 27, 2021.
Prior Publication US 2023/0126516 A1, Apr. 27, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/345 (2013.01); C23C 16/45527 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/02312 (2013.01); H01L 21/02491 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of forming a conformal doped silicon nitride film on a surface of a substrate, the method comprising the steps of:
using a first thermal atomic layer deposition process to deposit a silicon nitride layer; and
using a second thermal atomic layer deposition process to deposit a doped silicon nitride layer,
wherein the first thermal atomic layer deposition process comprises providing a first precursor and a first reactant to a reaction chamber,
wherein the second thermal atomic layer deposition process comprises providing a second precursor and a second reactant to the reaction chamber, wherein the second reactant comprises a dopant,
wherein one or more of the first precursor differs from the second precursor and the first reactant differs from the second reactant,
wherein the silicon nitride layer and the doped silicon nitride layer together form the conformal doped silicon nitride film,
wherein the second precursor comprises one or more of carbon (C) and boron (B),
wherein the dopant comprises carbon (C) or boron (B) and a concentration of the dopant in the conformal doped silicon nitride film is between 0 and 30 at %,
wherein the conformal doped silicon nitride film exhibits a step coverage equal to or greater than 50%,
wherein a temperature within the reaction chamber is less than 650° C., and
wherein the conformal doped silicon nitride film is not exposed to a plasma during the method.