US 12,378,438 B2
Polishing solution, dispersion, polishing solution production method, and polishing method
Keisuke Inoue, Tokyo (JP); and Hiroshi Ono, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Appl. No. 17/439,230
Filed by Showa Denko Materials Co., Ltd., Tokyo (JP)
PCT Filed Jun. 2, 2020, PCT No. PCT/JP2020/021800
§ 371(c)(1), (2) Date Sep. 14, 2021,
PCT Pub. No. WO2020/246471, PCT Pub. Date Dec. 10, 2020.
Claims priority of application No. PCT/JP2019/022144 (WO), filed on Jun. 4, 2019.
Prior Publication US 2022/0145132 A1, May 12, 2022
Int. Cl. C09G 1/02 (2006.01); H01L 21/304 (2006.01); B82Y 40/00 (2011.01)
CPC C09G 1/02 (2013.01) [H01L 21/304 (2013.01); B82Y 40/00 (2013.01)] 14 Claims
 
1. A polishing liquid for CMP, comprising: abrasive grains containing silica; an anticorrosive agent containing 6-aminohexanoic acid; and a liquid medium, wherein
in a particle size distribution on mass basis obtained by a centrifugation method, D50 of the abrasive grains is 150 nm or less, D90 of the abrasive grains is 100 nm or more, and a difference between the D90 and the D50 is 21 nm or more, and
a content of the abrasive grains is 1.0% by mass or more based on the total amount of the polishing liquid.