US 12,378,272 B2
Yttrium compound and method of manufacturing integrated circuit device by using the same
Hyunwoo Kim, Seoul (KR); Kazuki Harano, Tokyo (JP); Kiyoshi Murata, Tokyo (JP); Haruyoshi Sato, Tokyo (JP); Younsoo Kim, Yongin-si (KR); Seungmin Ryu, Hwaseong-si (KR); Atsushi Yamashita, Tokyo (JP); Gyuhee Park, Hwaseong-si (KR); and Younjoung Cho, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.; and ADEKA CORPORATION, Tokyo (JP)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 7, 2022, as Appl. No. 17/859,214.
Claims priority of application No. 10-2021-0090489 (KR), filed on Jul. 9, 2021; and application No. 10-2021-0149957 (KR), filed on Nov. 3, 2021.
Prior Publication US 2023/0040334 A1, Feb. 9, 2023
Int. Cl. C07F 17/00 (2006.01); C23C 16/40 (2006.01)
CPC C07F 17/00 (2013.01) [C23C 16/405 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit device, the method comprising forming an yttrium-containing film on a substrate by using an yttrium compound represented by General Formula (I),
[General Formula (I)]

OG Complex Work Unit Chemistry
wherein, in
R1 is a C1-C5 linear or branched alkyl group,
R2 and R3 are each a C1-C8 linear or branched alkyl group, R2 having a structure different than that of R3,
R4 is a hydrogen atom or a C1-C5 linear or branched alkyl group, and
n is an integer of 0 to 5.