US 12,377,578 B2
Monocrystalline silicon micro-nano dual-scale anti-reflection texture and preparation method therefor
Chuanzhen Huang, Qinhuangdao (CN); Xuefei Liu, Jinan (CN); Hanlian Liu, Jinan (CN); Peng Yao, Jinan (CN); Hongtao Zhu, Jinan (CN); Bin Zou, Jinan (CN); Dun Liu, Jinan (CN); Jun Wang, Jinan (CN); Zhen Wang, Qinhuangdao (CN); Longhua Xu, Qinhuangdao (CN); and Shuiquan Huang, Qinhuangdao (CN)
Assigned to SHANDONG UNIVERSITY, Jinan (CN); and YANSHAN UNIVERSITY, Qinhuangdao (CN)
Filed by SHANDONG UNIVERSITY, Shandong (CN); and YANSHAN UNIVERSITY, Hebei (CN)
Filed on Sep. 9, 2022, as Appl. No. 17/941,726.
Claims priority of application No. 202210697039.8 (CN), filed on Jun. 20, 2022.
Prior Publication US 2023/0405874 A1, Dec. 21, 2023
Int. Cl. B28D 5/04 (2006.01); B23K 26/0622 (2014.01); G02B 1/113 (2015.01); G02B 1/118 (2015.01); B23K 103/00 (2006.01)
CPC B28D 5/04 (2013.01) [B23K 26/0624 (2015.10); G02B 1/113 (2013.01); G02B 1/118 (2013.01); B23K 2103/56 (2018.08)] 10 Claims
OG exemplary drawing
 
1. A method for preparing a monocrystalline silicon micro-nano dual-scale anti-reflection texture, comprising:
a nanosecond-laser-assisted waterjet device is utilized for scanning in a longitudinal direction of a monocrystalline silicon wafer, and waterjet is arranged behind nanosecond lasers in a scanning speed direction to prepare a V-shaped groove array in the monocrystalline silicon wafer; and
nano structures different in size or density are processed in different positions of the V-shaped groove array by utilizing femtosecond lasers in different focus height for sequential scanning in a transverse direction perpendicular to the V-shaped groove array or forming a set angle with the V-shaped groove array, thereby obtaining the micro-nano dual-scale anti-reflection texture.