US 12,377,509 B2
Manufacturing method for a substrate wafer
Ryo Taga, Nishigo-mura (JP); and Yuki Tanaka, Nishigo-mura (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 17/921,805
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Mar. 17, 2021, PCT No. PCT/JP2021/010731
§ 371(c)(1), (2) Date Oct. 27, 2022,
PCT Pub. No. WO2021/235067, PCT Pub. Date Nov. 25, 2021.
Claims priority of application No. 2020-88949 (JP), filed on May 21, 2020.
Prior Publication US 2023/0173633 A1, Jun. 8, 2023
Int. Cl. B24B 1/00 (2006.01); B24B 7/02 (2006.01); B24B 7/22 (2006.01); H01L 21/02 (2006.01); B29C 59/02 (2006.01)
CPC B24B 7/02 (2013.01) [B24B 7/228 (2013.01); H01L 21/02013 (2013.01); H01L 21/02024 (2013.01); B29C 2059/027 (2013.01)] 15 Claims
 
1. A manufacturing method for a substrate wafer, comprising:
providing a wafer having a first main surface and a second main surface on an opposite side to the first main surface;
forming a flattening resin layer on the second main surface of the wafer;
adsorbing and holding the flattening resin layer as a reference surface, and, with this condition, grinding or polishing the first main surface of the wafer as a first processing;
removing the flattening resin layer from the wafer;
adsorbing and holding the first main surface of the wafer subjected to the first processing, and, with this condition, grinding or polishing the second main surface of the wafer as a second processing;
adsorbing and holding the second main surface subjected to the second processing of the wafer, and, with this condition, further grinding or polishing the first main surface of the wafer as a third processing;
adsorbing and holding the first main surface subjected to the third processing of the wafer, and, with this condition, further grinding or polishing the second main surface of the wafer as a fourth processing to obtain a substrate wafer,
wherein the first processing and/or the third processing is executed such that the wafer has a central concave or central convex thickness distribution.