US 12,376,481 B2
Display apparatus and method of manufacturing the same
Jaebum Han, Yongin-si (KR); Younggil Park, Yongin-si (KR); Moonsung Kim, Yongin-si (KR); Jaisun Kyoung, Yongin-si (KR); Kihyun Kim, Yongin-si (KR); and Sooim Jeong, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jul. 22, 2021, as Appl. No. 17/382,425.
Claims priority of application No. 10-2020-0163051 (KR), filed on Nov. 27, 2020.
Prior Publication US 2022/0173186 A1, Jun. 2, 2022
Int. Cl. H10K 77/10 (2023.01); H10K 59/12 (2023.01); H10K 59/124 (2023.01)
CPC H10K 77/10 (2023.02) [H10K 59/124 (2023.02); H10K 59/12 (2023.02); H10K 59/1201 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer;
a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode; and
a second thin-film transistor arranged over the substrate and including a second semiconductor layer and a second gate electrode,
wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon, and not including a conductive material,
wherein the first semiconductor layer includes a silicon-based semiconductor material, and the second semiconductor layer includes an oxide-based semiconductor material,
wherein the first thin-film transistor and the second thin-film transistor are disposed in a display area comprising a pixel circuit connected to an organic light-emitting diode,
wherein the second sub-layer includes a top surface having a surface roughness, which represents an unevenness in heights made by each of upper peaks and each of lower valleys in at least one part of the top surface, in a range from 0.02 nm to 0.5 nm, and
wherein the second sub-layer has a hydrogen concentration of from 4.0E+21 atom/cm3 to 6.0E+21 atom/cm3, and the hydrogen concentration included in the second sub-layer controls the surface roughness of the top surface of the second sub-layer.