US 12,376,424 B2
Nitride semiconductor component and process for its production
Armin Dadgar, Berlin (DE); and Alois Krost, Berlin (DE)
Assigned to Allos Semiconductors GmbH, Dresden (DE)
Filed by AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed on Oct. 4, 2022, as Appl. No. 17/959,921.
Application 17/959,921 is a division of application No. 15/201,576, filed on Jul. 4, 2016, granted, now 12,125,938.
Application 15/201,576 is a continuation of application No. 11/643,632, filed on Dec. 20, 2006, granted, now 9,406,505, issued on Aug. 2, 2016.
Claims priority of provisional application 60/776,457, filed on Feb. 23, 2006.
Prior Publication US 2023/0028392 A1, Jan. 26, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/01335 (2025.01) [H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H10H 20/018 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A nitride semiconductor product comprising:
a substrate with a silicon surface;
an AlN nucleation layer arranged on the silicon surface of the substrate;
a masking layer, formed of silicon nitride, arranged on the AlN nucleation layer;
an AlGaN buffer layer directly adjacent to the AlN nucleation layer, wherein the masking layer is disposed on the AlGaN buffer layer;
a gallium-containing first nitride semiconductor layer arranged on the masking layer; and
a gallium-containing second nitride semiconductor layer, wherein an AlN or AlGaN containing nitride intermediate layer with a thickness of 8 nm to 15 nm is arranged between the gallium-containing first nitride semiconductor layer and the gallium-containing second nitride semiconductor layer;
a multi-quantum well structure; and
a p-doped, gallium-containing nitride semiconductor cover layer on the multi-quantum well structure.