US 12,376,417 B2
Semiconductor device with nanostructures
Hsin-Hsiang Tseng, Changhua County (TW); Chih-Fei Lee, Tainan (TW); Chia-Pin Cheng, Kaohsiung (TW); and Fu-Cheng Chang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 26, 2023, as Appl. No. 18/359,658.
Application 16/390,080 is a division of application No. 15/469,646, filed on Mar. 27, 2017, granted, now 10,269,990, issued on Apr. 23, 2019.
Application 18/359,658 is a continuation of application No. 18/070,311, filed on Nov. 28, 2022, granted, now 11,777,040.
Application 18/070,311 is a continuation of application No. 17/067,548, filed on Oct. 9, 2020, granted, now 11,515,435, issued on Nov. 29, 2022.
Application 17/067,548 is a continuation of application No. 16/390,080, filed on Apr. 22, 2019, granted, now 10,804,414, issued on Oct. 13, 2020.
Claims priority of provisional application 62/433,307, filed on Dec. 13, 2016.
Prior Publication US 2023/0369517 A1, Nov. 16, 2023
Int. Cl. H10F 77/30 (2025.01); H10F 30/28 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 77/40 (2025.01)
CPC H10F 77/331 (2025.01) [H10F 30/2857 (2025.01); H10F 39/011 (2025.01); H10F 39/18 (2025.01); H10F 77/40 (2025.01); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11)] 20 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a substrate;
a light absorption region over the substrate; and
a nanostructure array over the light absorption region, the nanostructure array comprising a plurality of nanostructures repeatedly arranged from a top view, wherein the plurality of nanostructures are at least partially embedded within the light absorption region.