US 12,376,411 B2
Image sensing device including through silicon via (TSV) structure
Yun Hui Yang, Icheon-si (KR); Ji Suk Park, Icheon-si (KR); and Tae Yang Lee, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 21, 2022, as Appl. No. 17/725,845.
Prior Publication US 2023/0083783 A1, Mar. 16, 2023
Int. Cl. H10F 39/00 (2025.01); H01L 23/48 (2006.01)
CPC H10F 39/809 (2025.01) [H01L 23/481 (2013.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a first substrate including a first front surface and a first back surface opposite to the first front surface;
a first interlayer insulation layer disposed below the first front surface and structured to include a first interconnect;
a second substrate including a second front surface and a second back surface opposite to the second front surface;
a second interlayer insulation layer disposed over the second front surface and below the first interlayer insulation layer to be in contact with the first interlayer insulation layer, the second interlayer insulation layer structured to include a second interconnect;
a first through silicon via (TSV) disposed in a through hole that is formed by penetrating the first substrate and the first interlayer insulation layer and by etching of a portion of the second interlayer insulation layer, the first TSV structured to electrically connect the first interconnect to the second interconnect; and
a passivation layer structured to cover the first TSV and fill the through hole,
wherein the first TSV includes a lower end in contact with the second interconnect and an upper end opposite to the lower end, and
wherein the upper end of the first TSV is located at a height lower than the first back surface within the through hole.