US 12,376,314 B1
Method for threshold switch device, threshold switch device, and dynamic memory
Hao Tong, Wuhan (CN); Binhao Wang, Wuhan (CN); and Xiangshui Miao, Wuhan (CN)
Assigned to Huazhong University of Science and Technology, Wuhan (CN)
Filed by Huazhong University of Science and Technology, Wuhan (CN)
Filed on Jan. 14, 2025, as Appl. No. 19/019,752.
Claims priority of application No. 202411596829.2 (CN), filed on Nov. 8, 2024.
Int. Cl. H10B 63/00 (2023.01); G06F 30/36 (2020.01)
CPC H10B 63/24 (2023.02) [G06F 30/36 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A design method for a threshold switch device, comprising:
testing a hold voltage, a low-resistance-state (LRS) resistance, and a threshold voltage of a threshold switch function layer;
determining a target hold voltage of a threshold switch device according to the threshold voltage;
determining a resistance sum of a top electrode and a bottom electrode of the threshold switch device according to the hold voltage and the LRS resistance of the threshold switch function layer and the target hold voltage of the threshold switch device; and
selecting materials and thin film parameters of the top electrode and the bottom electrode according to the resistance sum of the top electrode and the bottom electrode of the threshold switch device, to design the threshold switch device meeting the target hold voltage.