US 12,374,639 B2
Non-DMSO stripper for advance package metal plating process
Tzu-Yang Lin, Hsinchu (TW); Chen-Yu Liu, Hsinchu (TW); Yung-Han Chuang, Hsinchu (TW); Ming-Da Cheng, Hsinchu (TW); and Ching-Yu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/827,415.
Claims priority of provisional application 63/327,221, filed on Apr. 4, 2022.
Prior Publication US 2023/0317647 A1, Oct. 5, 2023
Int. Cl. H01L 23/00 (2006.01); C11D 3/30 (2006.01); G03F 7/42 (2006.01)
CPC H01L 24/03 (2013.01) [C11D 3/30 (2013.01); G03F 7/425 (2013.01); C11D 2111/22 (2024.01); H01L 2224/0346 (2013.01); H01L 2224/0362 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a dielectric layer over a substrate;
etching the dielectric layer to form an opening therein;
depositing a seed layer along exposed surfaces of the opening and on a top surface of the dielectric layer;
forming a patterned photoresist layer on the seed layer, the patterned photoresist layer exposing portions of the seed layer in the opening and portions of the seed layer over the top surface of the dielectric layer around the opening;
performing a plating process to deposit a conductive pad over the exposed portions of the seed layer; and
removing the patterned photoresist layer using a photoresist stripping composition, the photoresist stripping composition comprising:
an organic alkaline compound comprising at least one of a primary amine, a secondary amine, a tertiary amine or a quaternary amine hydroxide or a salt thereof;
a solvent comprising at least one of a glycol ether, a glycol acetate, a glycol or a pyrrolidone;
a co-solvent comprising at least one of polyhydroxystyrene, styrene-hydroxystyrene copolymer, polyvinyl acetate or polyvinyl butyral; and
a surfactant,
wherein the photoresist stripping composition is free of dimethyl sulfoxide.