US 12,373,345 B2
Intelligent management of ferroelectric memory in a data storage device
Jon D. Trantham, Chanhassen, MN (US); Praveen Viraraghavan, Chicago, IL (US); John W. Dykes, Eden Prairie, MN (US); Ian J. Gilbert, Chanhassen, MN (US); Sangita Shreedharan Kalarickal, Eden Prairie, MN (US); Matthew J. Totin, Exelsior, MN (US); Mohamad El-Batal, Superior, CO (US); and Darshana H. Mehta, Shakopee, MN (US)
Assigned to SEAGATE TECHNOLOGY LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Nov. 6, 2023, as Appl. No. 18/503,118.
Application 18/503,118 is a continuation of application No. 17/730,920, filed on Apr. 27, 2022, granted, now 11,853,213.
Claims priority of provisional application 63/201,394, filed on Apr. 28, 2021.
Prior Publication US 2024/0070070 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/0802 (2016.01); G06F 3/06 (2006.01)
CPC G06F 12/0802 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G06F 2212/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
responsive to execution of at least one read command from a client, retrieving speculative readback data from a main memory into a front-end cache arranged as a non-volatile memory (NVM) comprising ferroelectric memory element (FME) cells; and
evaluating a write command from the client, providing a first status value to the client responsive to available cache lines in the front-end cache to accommodate writeback data associated with the write command, providing a second status value to the client responsive to a lack of available cache lines in the front-end cache to accommodate the writeback data associated with the write command.