US 12,372,469 B2
Defect classification equipment for silicon carbide substrate using single incident light-based photoluminescence and defect classification method using the same
Huyndon Jung, Yeongju-si (KR); and Min-jung Lee, Gunpo-si (KR)
Assigned to ETAMAX CO., LTD, Suwon-si (KR)
Filed by ETAMAX CO., LTD, Suwon-si (KR)
Filed on Apr. 26, 2022, as Appl. No. 17/660,770.
Claims priority of application No. 10-2021-0133957 (KR), filed on Oct. 8, 2021.
Prior Publication US 2023/0113093 A1, Apr. 13, 2023
Int. Cl. G01N 21/64 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01); G06T 7/00 (2017.01)
CPC G01N 21/6489 (2013.01) [G01N 21/8851 (2013.01); G01N 21/9501 (2013.01); G06T 7/001 (2013.01); G01N 2021/8874 (2013.01); G01N 2201/021 (2013.01); G06F 2218/14 (2023.01); G06T 2207/30148 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of inspecting a stacking fault of a silicon carbide substrate, the method comprising:
irradiating a single incident light having a first wavelength corresponding to an energy greater than a band gap energy of the substrate to scan at least a portion of the substrate;
obtaining, using a photomultiplier tube (PMT), a mapping image of photoluminescence having a second wavelength corresponding to the band gap energy of the substrate and emitted from the at least a portion of the substrate in response to irradiating the single incident light;
identifying a defect region having a stacking fault from the mapping image, the defect region having an intensity of the photoluminescence having the second wavelength lower than that of the second wavelength corresponding to the band gap energy of the substrate;
obtaining location data of the defect region;
irradiating the single incident light to the defect region;
acquiring, using a spectrometer, a photoluminescence spectrum of photoluminescence emitted from the defect region in response to irradiating the single incident light;
providing a stacking fault database comprising a plurality of stacking fault types and a plurality of peak wavelength ranges, each of which corresponds to one of the plurality of stacking fault types, wherein the plurality of stacking fault types comprise a first stacking fault type, and the plurality of peak wavelength ranges comprise a first peak wavelength range that corresponds to the first stacking fault type;
determining that a peak wavelength in the photoluminescence spectrum of the defect region is within the first peak wavelength range; and
determining, based on the determination that the peak wavelength is within the first peak wavelength range, the stacking fault in the defect region as the first stacking fault type.