US 12,369,426 B2
Photovoltaic devices and method of making
Holly Ann Blaydes, Perrysburg, OH (US); Kristian William Andreini, Burnt Hills, NY (US); William Hullinger Huber, Ottawa Hills, OH (US); Eugene Thomas Hinners, Gansevoort, NY (US); Joseph John Shiang, Niskayuna, NY (US); Yong Liang, Niskayuna, NY (US); and Jongwoo Choi, Boise, ID (US)
Assigned to First Solar, Inc., Tempe, AZ (US)
Filed by First Solar, Inc., Tempe, AZ (US)
Filed on Jan. 12, 2024, as Appl. No. 18/411,782.
Application 18/411,782 is a continuation of application No. 13/875,739, filed on May 2, 2013, granted, now 11,876,140.
Prior Publication US 2024/0154049 A1, May 9, 2024
Int. Cl. H10F 77/121 (2025.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01); H10F 10/16 (2025.01); H10F 10/162 (2025.01); H10F 71/00 (2025.01); H10F 77/123 (2025.01); H10F 77/169 (2025.01); H10F 77/20 (2025.01)
CPC H10F 77/121 (2025.01) [C23C 14/0629 (2013.01); H01L 21/02422 (2013.01); H01L 21/02477 (2013.01); H01L 21/0248 (2013.01); H01L 21/02483 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/0251 (2013.01); H01L 21/0256 (2013.01); H01L 21/02562 (2013.01); H10F 10/16 (2025.01); H10F 10/162 (2025.01); H10F 71/1253 (2025.01); H10F 71/1257 (2025.01); H10F 77/123 (2025.01); H10F 77/1233 (2025.01); H10F 77/1237 (2025.01); H10F 77/1696 (2025.01); H10F 77/244 (2025.01); Y02E 10/543 (2013.01); Y02P 70/50 (2015.11)] 20 Claims
OG exemplary drawing
 
1. A photovoltaic device, comprising:
a transparent layer stack;
a p+ type semiconducting layer; and
an absorber layer in direct contact with the transparent layer stack at a front interface of the absorber layer, wherein:
the absorber layer consists of a thickness of the absorber layer between the front interface of the absorber layer and a back interface of the absorber layer,
the front interface of the absorber layer is closer to the transparent layer stack than the back interface of the absorber layer,
the absorber layer comprises cadmium, selenium, and tellurium,
an atomic concentration of selenium varies across the thickness of the absorber layer,
the atomic concentration of selenium is greater at the front interface of the absorber layer relative to the back interface of the absorber layer,
the absorber layer is a p-type layer,
the absorber layer consists of a first region and a second region,
the first region extends from the front interface of the absorber layer to the second region,
the second region extends from the first region to the back interface of the absorber layer,
a ratio of an average atomic concentration of selenium in the first region to an average atomic concentration of selenium in the second region is greater than 10,
the absorber layer is between the transparent layer stack and the p+ type semiconducting layer,
the p+ type semiconducting layer comprises at least one of: zinc telluride, magnesium telluride, manganese telluride, beryllium telluride, mercury telluride, arsenic telluride, antimony telluride, or copper telluride, and
the photovoltaic device has no window layer.