US 12,369,364 B1
Power MOSFET with gate-source ESD diode structure
Wan-Yu Kai, New Taipei (TW); Chia-Wei Hu, New Taipei (TW); and Ta-Chuan Kuo, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on May 21, 2024, as Appl. No. 18/670,709.
Application 18/670,709 is a division of application No. 18/416,776, filed on Jan. 18, 2024, granted, now 12,154,941.
Int. Cl. H01L 29/861 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 89/60 (2025.01)
CPC H10D 62/109 (2025.01) [H10D 30/668 (2025.01); H10D 64/513 (2025.01); H10D 89/611 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a drain and a source on opposing sides of an epitaxial layer;
a plurality of gates formed in the epitaxial layer;
a source contact connected to the source;
a gate contact connected to the plurality of gates;
a gate-source electrostatic discharge (ESD) diode structure connected between the gate contact and the source contact;
a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure; and
wherein the breakdown voltage enhancement and leakage prevention structure comprises a plurality of n-type wells and a plurality of p-type wells arranged in an alternating manner, and a body ring structure.