US 12,369,362 B2
Forming semiconductor structures with two-dimensional materials
Chao-Ching Cheng, Hsinchu (TW); Hung-Li Chiang, Hsinchu (TW); Chun-Chieh Lu, Hsinchu (TW); Ming-Yang Li, Hsinchu (TW); and Tzu-Chiang Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 28, 2024, as Appl. No. 18/759,611.
Application 18/759,611 is a continuation of application No. 18/160,256, filed on Jan. 26, 2023, granted, now 12,046,665.
Application 18/160,256 is a continuation of application No. 17/240,482, filed on Apr. 26, 2021, granted, now 11,600,720, issued on Mar. 7, 2023.
Application 17/240,482 is a continuation of application No. 16/573,892, filed on Sep. 17, 2019, granted, now 11,004,965, issued on May 11, 2021.
Prior Publication US 2024/0355914 A1, Oct. 24, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 48/36 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01)
CPC H10D 48/362 (2025.01) [H10D 30/62 (2025.01); H10D 30/6737 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate;
a first structure over the substrate;
a second structure laterally in contact with an edge surface of the first structure along a first direction, the second structure including a first metal material; and
a semiconductor layer of a two-dimensional material on the first structure,
wherein the first metal material of the second structure is a seed material with respect to the two-dimensional material.