US 12,368,082 B2
IGBT chip integrating temperature sensor
Boning Huang, Dongguan (CN); Wentao Yang, Dongguan (CN); and Junhe Wang, Shanghai (CN)
Assigned to HUAWEI TECHNOLOGIES CO., LTD., Shenzhen (CN)
Filed by HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed on Nov. 25, 2022, as Appl. No. 17/994,053.
Application 17/994,053 is a continuation of application No. PCT/CN2021/093711, filed on May 13, 2021.
Prior Publication US 2023/0087724 A1, Mar. 23, 2023
Int. Cl. H10D 12/00 (2025.01); H01L 23/34 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/80 (2025.01)
CPC H01L 23/34 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/552 (2013.01); H10D 12/411 (2025.01); H10D 62/127 (2025.01); H10D 64/231 (2025.01); H10D 64/512 (2025.01); H10D 84/811 (2025.01)] 12 Claims
OG exemplary drawing
 
1. An insulated gate bipolar transistor (IGBT) chip integrating a temperature sensor, comprising:
a cell region having a plurality of IGBT cells;
an emitter pad, disposed on the cell region, and electrically connected to emitters of the plurality of IGBT cells;
a gate pad and a gate finger structure, wherein
the gate pad and the gate finger structure are located in the cell region, and
the gate finger structure is connected between the gate pad and gates of the plurality of IGBT cells;
a temperature sensing module having:
the temperature sensor,
an anode pad,
a cathode pad, and
a metal lead connected between the temperature sensor, the anode pad, and the cathode pad, wherein
the temperature sensor and at least a part of the metal lead are located in the gate finger structure and are insulated from the gate finger structure; and
a conductive shielding structure disposed, at least, between the gate finger structure and a part of the metal lead located in the gate finger structure, wherein
the conductive shielding structure is insulated from the metal lead and the gate finger structure, and
the conductive shielding structure is electrically connected to the emitter pad.