US 12,367,918 B2
Semiconductor device and semiconductor system related to row hammer refresh
Jung Ho Lim, Icheon-si Gyeonggi-do (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed on Aug. 14, 2023, as Appl. No. 18/449,540.
Claims priority of application No. 10-2023-0060183 (KR), filed on May 9, 2023.
Prior Publication US 2024/0379145 A1, Nov. 14, 2024
Int. Cl. G11C 7/00 (2006.01); G11C 11/406 (2006.01)
CPC G11C 11/40615 (2013.01) 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an interval control circuit configured to generate a detection interval signal by detecting that an internal address, which is input right before a pulse of a row hammer command signal is generated, is sampled as a target address;
a signal correction circuit configured to generate a correction random signal to adjust the internal address so that the internal address is sampled as the target address less than or equal to a preset number of times between consecutive pulses of the row hammer command signal during a designation interval and a detection interval in which the detection interval signal is activated; and
a row hammer refresh circuit configured to execute a row hammer refresh based on the target address that is generated in response to the correction random signal.