US 12,366,964 B2
Storage device operated by zone and data processing system including the same
Joo Young Hwang, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 30, 2023, as Appl. No. 18/325,468.
Claims priority of application No. 10-2022-0140300 (KR), filed on Oct. 27, 2022.
Prior Publication US 2024/0143183 A1, May 2, 2024
Int. Cl. G11C 7/14 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/349 (2013.01); G11C 7/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a memory device including a plurality of memory blocks including a plurality of memory cells connected to a plurality of gate lines, memory cells of a first group among the plurality of memory cells including memory cells of a first type, memory cells other than the memory cells of the first group among the plurality of memory cells are a second group, and memory cells of the second group including memory cells of a second type different from the first type; and
a memory controller configured to
control the memory device,
transmit size information of the memory cells of the first group to control a host to program data into the memory cells of the first group,
store an update of the data programmed in the memory cells of the first group with respect to the memory cells of the second group, and
control the host not to perform a plurality of write requests to the same address with respect to the memory cells of the first group more than an allowed number of writes.