US 12,366,482 B2
Infrared device and method for manufacturing the same
Heng-Chung Chang, Taichung (TW); Chih-Ya Tsai, Taichung (TW); Hui-Chi Su, Kaohsiung (TW); and Jing-Yuan Lin, New Taipei (TW)
Assigned to Industrial Technology Research Institute, Hsinchu (TW)
Filed by Industrial Technology Research Institute, Hsinchu (TW)
Filed on Nov. 24, 2022, as Appl. No. 17/993,942.
Claims priority of application No. 111117466 (TW), filed on May 10, 2022.
Prior Publication US 2023/0366739 A1, Nov. 16, 2023
Int. Cl. G01J 5/20 (2006.01)
CPC G01J 5/20 (2013.01) 20 Claims
OG exemplary drawing
 
1. An infrared device, comprising:
a substrate;
a metal layer disposed on the substrate;
a first semiconductor layer disposed on the substrate, wherein a cavity is formed between the first semiconductor layer and the metal layer, and the first semiconductor layer is electrically connected to the metal layer;
an absorber layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the absorber layer and electrically connected to the first semiconductor layer, wherein a temperature coefficient of resistance (TCR) of the first semiconductor layer is different from that of the second semiconductor layer.