| CPC B81B 7/0083 (2013.01) [B81B 7/007 (2013.01); B81B 7/0077 (2013.01); B81C 1/0023 (2013.01); B81C 1/00301 (2013.01); B81C 1/00333 (2013.01); B81C 1/00341 (2013.01); H01L 23/34 (2013.01); H01L 23/498 (2013.01); H10N 30/302 (2023.02); B81B 2201/0271 (2013.01); B81B 2207/07 (2013.01); B81B 2207/094 (2013.01); B81C 2201/016 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/0154 (2013.01); H01L 23/3107 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/181 (2013.01)] | 13 Claims |

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1. A method of fabricating an oscillator integrated circuit device, the method comprising:
mounting a first one of a control die or a MEMS resonator die to a lead frame;
depositing a thermally-conductive material;
physically-mounting a second one of the control die or the MEMS resonator die in a stacked relationship with the first one, such that the first one and the second one are physically coupled with each other through the thermally-conductive material;
wherein the method further comprises electrically-coupling the first one with the second one via at least one conductive path; and
wherein the method further comprises encapsulating at least one of the control die or the MEMS resonator die relative to the other, such that the at least one of the control die or the MEMS resonator die and the thermally-conductive material are completely encased relative to an ambient environment which is external to the oscillator integrated circuit.
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