US 12,041,854 B2
Magnetic tunnel junction device, magnetic memory using the same and method for manufacturing the same
Jongill Hong, Seoul (KR)
Assigned to UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed by UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed on Oct. 25, 2021, as Appl. No. 17/509,748.
Claims priority of application No. 10-2020-0139656 (KR), filed on Oct. 26, 2020.
Prior Publication US 2022/0131069 A1, Apr. 28, 2022
Int. Cl. H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a magnetic tunnel junction device comprising the steps of:
a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate;
a heat treatment step of heat-treating the initial multilayer structure; and
a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted into at least one ferromagnetic material layer and the oxide layer by heat treatment.