US 12,040,354 B2
Capacitor structure and method for manufacturing the same
Teng-Chuan Hu, Tainan (TW); Chu-Fu Lin, Kaohsiung (TW); and Chun-Hung Chen, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsinchu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsinchu (TW)
Filed on Mar. 8, 2023, as Appl. No. 18/119,009.
Application 18/119,009 is a continuation of application No. 17/136,075, filed on Dec. 29, 2020, granted, now 11,646,343.
Prior Publication US 2023/0238425 A1, Jul. 27, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/91 (2013.01) 13 Claims
OG exemplary drawing
 
1. A capacitor structure, comprising:
a substrate having a first side, a second side opposite to the first side and an upper surface corresponding to the first side;
a plurality of first trenches formed on the first side of the substrate, disposed along a first direction and a second direction on the first side of the substrate, and penetrating the substrate along a third direction intersected with the first direction and the second direction, the first direction and the second direction intersected with each other and parallel to the upper surface of the substrate;
a plurality of second trenches formed on the second side of the substrate and penetrating the substrate along the third direction, the first trenches and the second trenches separated from each other in the first direction, wherein the first trenches and the second trenches are non-overlapping in the third direction;
a first capacitor extending along the first side and into the first trenches; and
a second capacitor extending along the second side and into the second trenches.