US 12,040,256 B2
Semiconductor device and method
Hsu-Lun Liu, Tainan (TW); Wen-Hsiung Lu, Tainan (TW); Ming-Da Cheng, Taoyuan (TW); Chen-En Yen, Tainan (TW); Cheng-Lung Yang, Kaohsiung (TW); and Kuanchih Huang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,559.
Application 17/704,762 is a division of application No. 16/746,017, filed on Jan. 17, 2020, granted, now 11,289,404, issued on Mar. 29, 2022.
Application 18/362,559 is a continuation of application No. 17/704,762, filed on Mar. 25, 2022, granted, now 11,776,881.
Prior Publication US 2024/0021499 A1, Jan. 18, 2024
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/60 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first substrate;
an opening extending into the first substrate, the opening including a first region adjacent a first surface of the first substrate and a second region distal to the first surface of the first substrate, wherein:
sidewalls of the opening in the first region include a stack of first concave portions, respective first concave portions extending a first distance into the first substrate, the first distance being parallel to the first surface of the first substrate,
sidewalls of the opening in the second region include a stack of second concave portions, respective second concave portions extending a second distance, greater than and parallel to the first distance, into the first substrate, and
a first conductor filling the respective first concave portions and at least partially filling the respective second concave portions.