US 12,040,250 B2
Heat pipe for vertically stacked field effect transistors
Terence Hook, Jericho Center, VT (US); Brent A. Anderson, Jericho, VT (US); and Anthony I. Chou, Guilderland, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 15, 2022, as Appl. No. 17/841,202.
Prior Publication US 2023/0411241 A1, Dec. 21, 2023
Int. Cl. H01L 23/427 (2006.01); H01L 23/522 (2006.01); H01L 27/12 (2006.01)
CPC H01L 23/427 (2013.01) [H01L 23/5226 (2013.01); H01L 27/1203 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
vertically stacked field effect transistors located in an electrically active device area of the semiconductor structure; and
an electrically inactive structure located in an electrically inactive device area of the semiconductor structure that is located adjacent to the electrically active device area of the semiconductor structure, wherein the electrically inactive structure comprises at least one vertical interconnect structure that continuously extends from an uppermost layer of the vertically stacked field effect transistors to a bottommost layer of the vertically stacked field effect transistors.