US 12,040,018 B2
Method for programming memory
I-Che Lee, Taipei (TW); and Huai-Ying Huang, Jhonghe (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 8, 2022, as Appl. No. 18/077,580.
Application 18/077,580 is a division of application No. 17/199,849, filed on Mar. 12, 2021, granted, now 11,527,289.
Prior Publication US 2023/0097518 A1, Mar. 30, 2023
Int. Cl. G11C 16/10 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/004 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A circuit comprising:
a bit line;
a source line;
a word line;
a memory array comprising a memory cell, the memory cell coupled to the bit line, the source line, and the word line, the memory cell comprising a memory element; and
a bit line driver coupled to the bit line;
a source line driver coupled to the source line; and
a word line driver coupled to the word line,
wherein the bit line driver, the source line driver, and the word line driver are configured program the memory element with a first current during a first period of time and a second current, different than the first current, during a second period of time.