	US 12,038,599 B2
	Photonic package and method of manufacture
Chen-Hua Yu, Hsinchu (TW); Hsing-Kuo Hsia, Jhubei (TW); Kuo-Chiang Ting, Hsinchu (TW); Jiun Yi Wu, Zhongli (TW); Hung-Yi Kuo, Taipei (TW); and Shang-Yun Hou, Jubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 7, 2021, as Appl. No. 17/340,363.
Claims priority of provisional application 63/084,051, filed on Sep. 28, 2020.
Prior Publication US 2022/0099887 A1, Mar. 31, 2022
Int. Cl. G02B 6/12 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01)

CPC G02B 6/12004 (2013.01) [H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/167 (2013.01); H01L 25/18 (2013.01); H01L 31/02002 (2013.01); H01L 31/02327 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/211 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)]

20 Claims

1. A method, comprising:

patterning a silicon layer to form a first waveguide, wherein the silicon layer is on a first side of a buried oxide layer, wherein the buried oxide layer is over a substrate;

forming a first redistribution structure over the first waveguide;

bonding a first semiconductor die to the first redistribution structure;

removing the substrate to expose a second side of the buried oxide layer, wherein the second side of the buried oxide layer is opposite the first side of the buried oxide layer;

forming a second waveguide on the second side of the buried oxide layer;

forming a first dielectric layer over the second waveguide and over the second side of the buried oxide layer; and

forming a through via extending through the first dielectric layer to electrically and physically contact the first redistribution structure.