	US 12,037,682 B2
	Methods for forming low resistivity tungsten features
Peiqi Wang, Campbell, CA (US); Cheng Cheng, San Jose, CA (US); Kai Wu, Palo Alto, CA (US); Insu Ha, San Jose, CA (US); and Sang Jin Lee, Seoul (KR)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 25, 2022, as Appl. No. 17/814,653.
Claims priority of provisional application 63/363,646, filed on Apr. 27, 2022.
Claims priority of provisional application 63/252,478, filed on Oct. 5, 2021.
Prior Publication US 2023/0107536 A1, Apr. 6, 2023
Int. Cl. C23C 16/06 (2006.01); C23C 16/04 (2006.01); C23C 16/38 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01)

CPC C23C 16/38 (2013.01) [C23C 16/042 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01)]

20 Claims

1. A method of forming a structure on a substrate, comprising:

exposing the substrate to a tungsten-containing precursor gas at a precursor gas flow rate;

exposing the substrate to a reducing agent comprising boron at a reducing agent flow rate, wherein the tungsten-containing precursor gas and the reducing agent are alternated cyclically to form a nucleation layer over the substrate within at least one opening of the substrate, the nucleation layer comprising a boron to tungsten atomic ratio of about 1:4.5 to about 1:1;

treating the nucleation layer with an activated nitrogen species;

depositing a fill layer over the treated nucleation layer within the at least one opening; and

annealing the substrate at about 600° C. or greater.