US 12,037,681 B2
Method for forming carbon rich silicon-containing films
Sungsil Cho, Anyang-si (KR); Seobong Chang, Suwon (KR); Jae Eon Park, GyeongGi-Do (KR); Bryan C. Hendrix, Danbury, CT (US); and Thomas H. Baum, New Fairfield, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/854,473.
Application 17/854,473 is a continuation of application No. 16/868,973, filed on May 7, 2020, granted, now 11,414,750.
Claims priority of provisional application 62/844,505, filed on May 7, 2019.
Prior Publication US 2022/0364225 A1, Nov. 17, 2022
Int. Cl. C23C 16/36 (2006.01); C23C 16/56 (2006.01); C23C 22/73 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/36 (2013.01) [C23C 16/56 (2013.01); C23C 22/73 (2013.01); H01L 21/0214 (2013.01); H01L 21/02263 (2013.01)] 17 Claims
 
1. A method of forming a silicon oxycarbonitride film on a microelectronic device substrate, comprising exposing said substrate to
(i) a silicon precursor compound having the Formula (I)

OG Complex Work Unit Chemistry
wherein R1, R2, and R3 are independently chosen from hydrogen or C1-C6 alkyl, and each X and each Y, are independently chosen from hydrogen, halogen, C1-C6 alkyl, C1-C6 alkylamino, C1-C6 dialkylamino, and C1-C6 alkylhydrazido;
(ii) a co-reactant chosen from ammonia and nitrous oxide, under vapor deposition conditions, wherein said silicon oxycarbonitride film possesses a pre-selected atomic percentage of carbon of from 55% to 60%;
exposing the substrate to an etch such that the silicon oxycarbonitride film acts as an etch stop; and
converting the silicon oxycarbonitride film into a silicon oxide film using an oxygen plasma.