US 12,364,096 B2
Light-emitting device and OLED display panel
Zhibing Yi, Hubei (CN); Jie Yang, Hubei (CN); Haitao Xu, Hubei (CN); Zhengshen Hua, Hubei (CN); Xiaosu Jiang, Hubei (CN); Yu Zhang, Hubei (CN); and Munjae Lee, Hubei (CN)
Assigned to Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan (CN)
Appl. No. 17/638,866
Filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Hubei (CN)
PCT Filed Jan. 11, 2022, PCT No. PCT/CN2022/071282
§ 371(c)(1), (2) Date Feb. 28, 2022,
PCT Pub. No. WO2023/123555, PCT Pub. Date Jul. 6, 2023.
Claims priority of application No. 202111632821.3 (CN), filed on Dec. 29, 2021.
Prior Publication US 2024/0040821 A1, Feb. 1, 2024
Int. Cl. H10K 50/818 (2023.01); H10K 50/125 (2023.01)
CPC H10K 50/818 (2023.02) [H10K 50/125 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a first electrode layer;
at least two light-emitting structure layers sequentially stacked on the first electrode layer;
a second electrode layer disposed on the light-emitting structure layers; and
a charge generation layer disposed between the light-emitting structure layers;
wherein the charge generation layer comprises an N-type electron generation layer, a metal activation layer, and a P-type hole generation layer, the metal activation layer is disposed between the N-type electron generation layer and the P-type hole generation layer, and one surface and another surface of the metal activation layer are in surface contact with the N-type electron generation layer and the P-type hole generation layer, respectively;
wherein the first electrode layer is an anode, the second electrode layer is a cathode, the at least two light-emitting structure layers comprise a first light-emitting structure layer and a second light-emitting structure layer, the first light-emitting structure layer is disposed on the anode, the charge generation layer is disposed on the first light-emitting structure layer, and the second light-emitting structure layer is disposed on the charge generation layer; and the first light-emitting structure layer comprises a first hole transport layer, a first light-emitting layer, and a first electron transport layer that are stacked, the second light-emitting structure layer comprises a second hole transport layer, a second light-emitting layer, and a second electron transport layer that are stacked, the N-type electron generation layer is disposed on the first electron transport layer, the metal activation layer is disposed on the N-type electron generation layer, the P-type hole generation layer is disposed on the metal activation layer, and the second hole transport layer is disposed on the P-type hole generation layer; and
wherein a ratio of a distance from the first light-emitting layer to the anode to a distance from the first light-emitting layer to the cathode ranges from 1:3 to 1:4; a ratio of a distance from the metal activation layer to the anode to a distance from the metal activation layer to the cathode ranges from 1:1 to 1:1.5; and a ratio of a distance from the second light-emitting layer to the anode to a distance from the second light-emitting layer to the cathode ranges from 3:1 to 3:2.