US 12,364,081 B2
Light emitting device and method for producing the same
Yuehua Jia, Tianjin (CN); Weifan Ke, Tianjin (CN); Huanshao Kuo, Tianjin (CN); Yu-Ren Peng, Tianjin (CN); and Duxiang Wang, Tianjin (CN)
Assigned to TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin (CN)
Filed by TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin (CN)
Filed on Sep. 7, 2022, as Appl. No. 17/939,394.
Claims priority of application No. 202111059485.8 (CN), filed on Sep. 10, 2021.
Prior Publication US 2023/0080272 A1, Mar. 16, 2023
Int. Cl. H01L 33/62 (2010.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/852 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a first type semiconductor layer;
an active layer;
a second type semiconductor layer disposed adjacent to said active layer and opposite said first type semiconductor layer, and including a current spreading layer that has a recess;
an insulation layer filling said recess and protruding from a surface of said current spreading layer that faces in a direction away from said active layer; and
a contact layer disposed on said surface of said current spreading layer which lacks said insulation layer,
a sum of a depth of said recess and a thickness of said contact layer being not less than a thickness of said insulation layer.