US 12,364,077 B2
Micro light emitting device, display apparatus including the same, and method of manufacturing the micro light emitting device
Junsik Hwang, Hwaseong-si (KR); Seogwoo Hong, Yongin-si (KR); and Kyungwook Hwang, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 10, 2021, as Appl. No. 17/197,357.
Claims priority of application No. 10-2020-0124744 (KR), filed on Sep. 25, 2020.
Prior Publication US 2022/0102602 A1, Mar. 31, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 27/12 (2006.01)
CPC H01L 33/62 (2013.01) [H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 2933/0066 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A micro light emitting device comprising:
a first type semiconductor layer;
a light emitting layer provided on the first type semiconductor layer;
a second type semiconductor layer provided on the light emitting layer;
one or more first type electrodes provided on the second type semiconductor layer and comprising a first portion extending into the light emitting layer and the first type semiconductor layer;
second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes;
an insulating layer comprising a first insulating portion provided directly between an upper surface of the second type semiconductor layer and a bottom portion of the one or more first type electrodes, a second insulating portion directly between the upper surface of the second type semiconductor layer and a bottom portion of the second type electrodes, and a third insulating portion directly between a side surface of the first portion of the one or more first type electrodes extending into the light emitting layer and the first type semiconductor layer, and the light emitting layer and the first type semiconductor layer; and
a bonding spread prevention portion provided between the one or more first type electrodes and the second type electrodes,
wherein the one or more first type electrodes is provided in a central region of the second type semiconductor layer, and the second type electrodes includes a first electrode and a second electrode provided symmetrically with respect to the one or more first type electrodes.