US 12,364,059 B2
Nitride semiconductor component and process for its production
Armin Dadgar, Berlin (DE); and Alois Krost, Berlin (DE)
Assigned to Allos Semiconductors GmbH, Dresden (DE)
Filed by AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed on Oct. 4, 2022, as Appl. No. 17/959,875.
Application 17/959,875 is a division of application No. 15/201,576, filed on Jul. 4, 2016, granted, now 12,125,938.
Application 15/201,576 is a continuation of application No. 11/643,632, filed on Dec. 20, 2006, granted, now 9,406,505, issued on Aug. 2, 2016.
Claims priority of provisional application 60/776,457, filed on Feb. 23, 2006.
Prior Publication US 2023/0041323 A1, Feb. 9, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 21/02 (2006.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/01335 (2025.01) [H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H10H 20/018 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A nitride semiconductor component comprising:
a substrate having a silicon surface;
an aluminum-containing nitride nucleation layer adjacent to the silicon surface;
a silicon nitride masking layer on the aluminum-containing nitride nucleation layer;
a first gallium-containing nitride semiconductor layer adjacent to the masking layer, the first gallium-containing nitride semiconductor layer having a structure of coalesced crystallite growth islands;
a second gallium-containing nitride semiconductor layer;
an intermediate aluminum-containing nitride layer composed of AlN or AlGaN and with a thickness of less than 30 nm arranged between the first gallium-containing nitride semiconductor layer and the second gallium-containing nitride semiconductor layer;
an aluminum-containing nitride buffer layer adjacent to the aluminum-containing nitride nucleation layer, the masking layer being on the aluminum-containing nitride buffer layer;
a second masking layer on the second gallium-containing nitride semiconductor layer;
a multiple quantum well (MQW) structure formed of nitride semiconductor material and disposed on the second masking layer, the MQW structure being disposed above the second gallium-containing nitride semiconductor layer; and
a p-doped, gallium-containing nitride semiconductor cladding layer on the MQW structure.