US 12,364,032 B2
Semiconductor device
Marina Mochizuki, Tokyo (JP); and Isao Suzumura, Tokyo (JP)
Assigned to Japan Display Inc., Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP)
Filed on Jun. 2, 2022, as Appl. No. 17/830,403.
Application 17/830,403 is a continuation of application No. PCT/JP2020/041532, filed on Nov. 6, 2020.
Claims priority of application No. 2019-219253 (JP), filed on Dec. 4, 2019.
Prior Publication US 2022/0293663 A1, Sep. 15, 2022
Int. Cl. H10F 39/18 (2025.01); H10F 39/00 (2025.01); H10D 30/67 (2025.01)
CPC H10F 39/18 (2025.01) [H10F 39/014 (2025.01); H10F 39/016 (2025.01); H10F 39/80377 (2025.01); H10D 30/6755 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device including an optical sensor,
the optical sensor comprising:
a thin film transistor formed on a substrate, and
a photo diode formed above the thin film transistor,
wherein the photo diode includes an anode, a photo conductive film and a cathode,
the cathode is constituted from a titanium film,
a first transparent conductive film is formed between the titanium film and the photo conductive film, and
an outer edge of the anode is within an outer edge of the photo diode.