US 12,364,028 B2
Image sensor device and methods of forming the same
Yeh-Hsun Fang, Taipei (TW); Chiao-Chi Wang, Hsiang (TW); Chung-Chuan Tseng, Hsinchu (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 7, 2024, as Appl. No. 18/737,600.
Application 18/365,680 is a division of application No. 18/070,239, filed on Nov. 28, 2022, granted, now 11,894,411, issued on Feb. 6, 2024.
Application 18/737,600 is a continuation of application No. 18/365,680, filed on Aug. 4, 2023, granted, now 12,057,467.
Application 18/070,239 is a continuation of application No. 16/901,931, filed on Jun. 15, 2020, granted, now 11,515,355, issued on Nov. 29, 2022.
Prior Publication US 2024/0321933 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/021 (2025.01) [H10F 39/199 (2025.01); H10F 39/802 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate including a silicon-based semiconductor material;
a non-silicon-based semiconductor structure embedded in the substrate;
a patterned structure extending laterally between sidewalls of the non-silicon-based semiconductor structure; and
a device layer disposed over a top surface of the non-silicon-based semiconductor structure.