| CPC H10F 30/225 (2025.01) [H10F 39/103 (2025.01); H10F 39/18 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01); H10F 77/959 (2025.01)] | 18 Claims |

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1. A photosensor comprising:
a semiconductor substrate including a first main surface and a second main surface opposite to the first main surface;
a plurality of avalanche photodiodes provided on the first main surface;
a first isolation region that is provided on the first main surface and electrically separates the plurality of avalanche photodiodes from one another in a first direction;
a second isolation region that is provided on the first main surface and electrically separates the plurality of avalanche photodiodes from one another in a second direction different from a direction of the first isolation region; and
a first connection portion having sides in plan view, wherein:
the first isolation region is connected to one side of the first connection portion, and the second isolation region is connected another side of the first connection portion,
the first isolation region and the second isolation region are depleted, and
at least one of the sides of the first connection portion is connected to none of the first isolation region and the second isolation region.
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