US 12,364,005 B2
Stacked multilayer 3D GaN high electron mobility transistor structure and process method
Kuang-Po Hsueh, Nanjing (CN)
Assigned to Nanjing Greenchip Semiconductor Co., Ltd., Nanjing (CN)
Filed by Nanjing Greenchip Semiconductor Co., Ltd., Nanjing (CN)
Filed on Nov. 24, 2022, as Appl. No. 17/993,978.
Claims priority of application No. 202211331691.4 (CN), filed on Oct. 28, 2022.
Prior Publication US 2024/0145478 A1, May 2, 2024
Int. Cl. H10D 84/86 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 84/05 (2025.01)
CPC H10D 84/86 (2025.01) [H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 84/05 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A stacked multilayer 3D GaN high electron mobility transistor (HEMT) structure, said structure comprising:
a substrate;
a first layer GaN HEMT structure formed on said substrate, which includes:
a first n-type GaN layer, a first n-type AlGaN layer, and a first doped GaN layer arranged to form on said substrate in sequence, wherein said first doped GaN layer is a p-type GaN layer or an n-type GaN layer;
a first source electrode been formed on said first n-type AlGaN layer and making ohmic contact with said first n-type AlGaN layer,
a first drain electrode been formed on said first n-type AlGaN layer not vertically overlapping said first source electrode and making ohmic contact with said first n-type AlGaN layer, and
a first gate electrode been formed on said first doped GaN layer not vertically overlapping said first source electrode and said first drain electrode;
a first dielectric layer formed on said first layer GaN HEMT structure;
a second layer GaN HEMT structure formed on said first dielectric layer including:
a second n-type GaN layer, a second n-type AlGaN layer, and a second doped GaN layer arranged to form on said first dielectric layer in sequence, wherein said second doped GaN layer is a p-type GaN layer or an n-type GaN layer;
a second source electrode been formed on said second n-type AlGaN layer and making ohmic contact with said second n-type AlGaN layer,
a second drain electrode been formed on said second n-type AlGaN layer not vertically overlapping said second source electrode and making ohmic contact with said second n-type AlGaN layer, and
a second gate electrode been formed on said second doped GaN layer not vertically overlapping said second source electrode and said second drain electrode;
a second dielectric layer formed on said second layer GaN HEMT structure; and
a source metal interconnection structure, a drain metal interconnection structure and a gate metal interconnection structure been formed to respectively connect between said first source electrode, said first drain electrode and said first gate electrode of said first layer GaN HEMT structure and said second source electrode, said second drain electrode and said second gate electrode of said second layer GaN HEMT structure.