| CPC H10D 64/258 (2025.01) [H10D 30/0295 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 64/117 (2025.01); H10D 64/252 (2025.01); H10D 64/2523 (2025.01); H10D 64/2527 (2025.01); H10D 64/256 (2025.01); H10D 64/513 (2025.01); H10D 64/516 (2025.01); H10D 64/518 (2025.01); H10D 64/519 (2025.01); H10D 64/693 (2025.01); H01L 2924/13091 (2013.01)] | 9 Claims |
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1. A semiconductor device, comprising:
a first electrode;
a second electrode opposite to the first electrode;
a semiconductor part provided between the first electrode and the second electrode, the semiconductor part including first and second trenches next to each other in a front side of the semiconductor part, the front side facing the second electrode;
a third electrode provided inside the first trench, the third electrode being electrically insulated from the semiconductor part by a first insulating film;
a control electrode provided inside the first trench with the third electrode, a distance from the control electrode to the first electrode being greater than a distance from the third electrode to the first electrode, the control electrode being electrically insulated from the semiconductor part by a second insulating film, the control electrode being electrically insulated from the third electrode by a third insulating film, the control electrode being electrically insulated from the second electrode by a fourth insulating film;
another third electrode provided inside the second trench, said another third electrode being electrically insulated from the semiconductor part by another first insulating film; and
an insulating body provided in the second trench between said another third electrode and the second electrode, no electrode being provided inside the second trench between said another third electrode and the second electrode,
the semiconductor part including a first layer of a first conductivity type, a second layer of a second conductivity type, and a third layer of the first conductivity type,
the first layer extending between the first electrode and the second electrode, the first layer including a portion positioned between the third electrode and said another third electrode,
the second layer being provided between the first layer and the second electrode and between the control electrode and the insulating body,
the third layer being provided between the second layer and the second electrode, the third layer contacting the second insulating film, the second layer and the third layer being electrically connected to the second electrode, wherein
the first insulating film, the second insulating film, the third insulating film, and the insulating body each include silicon oxide, and
the fourth insulating film includes a portion provided between the second electrode and the insulating body.
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