US 12,363,927 B2
Wide gap semiconductor device
Yusuke Maeyama, Saitama (JP); Shunichi Nakamura, Saitama (JP); and Jin Onuki, Saitama (JP)
Assigned to SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo (JP)
Appl. No. 18/008,657
Filed by SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo (JP)
PCT Filed Aug. 25, 2021, PCT No. PCT/JP2021/031066
§ 371(c)(1), (2) Date Dec. 6, 2022,
PCT Pub. No. WO2022/045160, PCT Pub. Date Mar. 3, 2022.
Claims priority of application No. 2020-143284 (JP), filed on Aug. 27, 2020.
Prior Publication US 2023/0246111 A1, Aug. 3, 2023
Int. Cl. H10D 8/60 (2025.01); H10D 64/64 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 64/64 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A wide gap semiconductor device comprising:
a wide gap semiconductor layer; and
a metal electrode disposed on the wide gap semiconductor layer,
wherein the metal electrode has a monocrystalline layer having a hexagonal close-packed (HCP) structure in an interface region between the metal electrode and the wide gap semiconductor layer, and
wherein the monocrystalline layer has a specific element-containing region containing O, S, P or Se.