| CPC H10D 1/696 (2025.01) [H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/68 (2025.01); H10D 1/716 (2025.01)] | 20 Claims |
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1. A method for fabricating a capacitor device, comprising:
providing a substrate having first and second conductive features;
depositing a first conductive layer on the substrate;
patterning the first conductive layer to form a first electrode from the first conductive layer;
treating the first electrode to form a first straining layer on the first electrode, wherein the first electrode includes columnar crystal grains and treating the first electrode comprises increasing intragranular strain in the first electrode;
depositing a first high-k dielectric layer on the first straining layer;
depositing a second conductive layer on the first high-k dielectric layer;
patterning the second conductive layer to form a second electrode from the second conductive layer;
depositing a cover dielectric layer over the second electrode;
forming first and second contact openings to expose the first and second conductive features respectively, wherein the first contact opening penetrates the first electrode, and second contact opening penetrates the second electrode; and
filling the first and second contact openings with a conductive material.
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