| CPC H10D 1/20 (2025.01) [H01F 17/0013 (2013.01); H01F 41/042 (2013.01); H01L 22/20 (2013.01); G01B 5/06 (2013.01); G01B 5/066 (2013.01); G01B 7/066 (2013.01); G01B 7/105 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/06155 (2013.01); H01L 2924/04541 (2013.01); H01L 2924/0455 (2013.01); H01L 2924/04563 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0496 (2013.01)] | 20 Claims |

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14. A method of manufacturing an inductive structure, the method comprising:
forming a metal line on a top surface of a semiconductor die;
generating a height profile of a top surface of the metal line as a function of a lateral displacement from a reference structure on the top surface of the semiconductor die by performing a surface height measurement;
forming a passivation dielectric layer over the metal line;
measuring a height profile of a top surface of the passivation dielectric layer as a function of the lateral displacement from the reference structure;
forming a magnetic material plate over the passivation dielectric layer;
measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement from the reference structure; and
determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate.
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